Advanced Characterization of a-Si:H by SSPG, SSPC and MPC techniques Report

Author
kaaya ismail, David Mota and Leonhard Probst
View Count
1097
License
Creative Commons CC BY 4.0
Abstract

The objective is to study the effect of different experimental parameters on the reconstruction of the density of states (DoS) and to verify the viability of the 1D/2D simulation model developed at GeePs. Beside the calculation of the DoS through the modulated photo-current method (MPC), the ambipolar minority carrier diffusion length is measured through steady state photocarrier grating (SSPG) and the majority carrier lifetime / mobility product is measured through steady state photo-conductivity (SSPC). The measurements were observed to be in agreement with the theoretical simulations, but further experiments are needed to accurately conclude the need of a 2D simulation for the MPC experiment.

Advanced Characterization of a-Si:H by SSPG, SSPC and MPC techniques Report